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MMBT9013
NPN Silicon Epitaxial Planar Transistors
for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj Tstg
Value 40 30 5 500 200 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 50 mA Current Gain Group G H at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 5 V Collector Bae Breakdown Voltage at IC = 100 A Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 A Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Voltage at VCE = 1 V, IC = 100 mA Gain Bandwidth Product at VCE = 6 V, IC = 20 mA
Symbol hFE hFE hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) VBE fT
Min. 100 160 40 40 30 5 100
Max. 250 400 100 100 0.6 1.2 1 -
Unit nA nA V V V V V V MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 15/04/2009
MMBT9013
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 15/04/2009

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